Specification	PN100A

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	300
Frequency - Transition	250 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max)	45 V

PN100A Series

NPN General Purpose Amplifier

Part	Power - Max [Max]	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Package / Case	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Mounting Type	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]
ON Semiconductor PN100	625 mW	250 MHz	400 mV	TO-226-3 TO-92-3	TO-92-3	50 nA	Through Hole	NPN	45 V	100	-55 °C	150 °C	500 mA
ON Semiconductor PN100A	625 mW	250 MHz	400 mV	TO-226-3 TO-92-3	TO-92-3	50 nA	Through Hole	NPN	45 V	300	-55 °C	150 °C	500 mA
ON Semiconductor PN100A_D27Z	625 mW	250 MHz	400 mV	TO-226-3 TO-92-3	TO-92-3	50 nA	Through Hole	NPN	45 V	300	-55 °C	150 °C	500 mA
ON Semiconductor PN100_D27Z	625 mW	250 MHz	400 mV	TO-226-3 TO-92-3	TO-92-3	50 nA	Through Hole	NPN	45 V	100	-55 °C	150 °C	500 mA
ON Semiconductor PN100A_D75Z	625 mW	250 MHz	400 mV	TO-226-3 TO-92-3	TO-92-3	50 nA	Through Hole	NPN	45 V	300	-55 °C	150 °C	500 mA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

PN100A Series

NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10.

Documents

Technical documentation and resources

Datasheet

Package Drawing-135AN-TO-92 3 4.82x4.76

Package Drawing