Catalog
NPN General Purpose Amplifier
Description
AI
NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10.
NPN General Purpose Amplifier
NPN General Purpose Amplifier
| Part | Power - Max [Max] | Frequency - Transition | Vce Saturation (Max) @ Ib, Ic | Package / Case | Supplier Device Package | Current - Collector Cutoff (Max) [Max] | Mounting Type | Transistor Type | Voltage - Collector Emitter Breakdown (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Operating Temperature [Min] | Operating Temperature [Max] | Current - Collector (Ic) (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | 625 mW | 250 MHz | 400 mV | TO-226-3 TO-92-3 | TO-92-3 | 50 nA | Through Hole | NPN | 45 V | 100 | -55 °C | 150 °C | 500 mA |
ON Semiconductor | 625 mW | 250 MHz | 400 mV | TO-226-3 TO-92-3 | TO-92-3 | 50 nA | Through Hole | NPN | 45 V | 300 | -55 °C | 150 °C | 500 mA |
ON Semiconductor | 625 mW | 250 MHz | 400 mV | TO-226-3 TO-92-3 | TO-92-3 | 50 nA | Through Hole | NPN | 45 V | 300 | -55 °C | 150 °C | 500 mA |
ON Semiconductor | 625 mW | 250 MHz | 400 mV | TO-226-3 TO-92-3 | TO-92-3 | 50 nA | Through Hole | NPN | 45 V | 100 | -55 °C | 150 °C | 500 mA |
ON Semiconductor | 625 mW | 250 MHz | 400 mV | TO-226-3 TO-92-3 | TO-92-3 | 50 nA | Through Hole | NPN | 45 V | 300 | -55 °C | 150 °C | 500 mA |