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CSDxxxxxF5x
Discrete Semiconductor Products

CSD13385F5

Active
Texas Instruments

12-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 0.8 MM X 1.5 MM, 19 MOHM, GATE ESD PROTECTION

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CSDxxxxxF5x
Discrete Semiconductor Products

CSD13385F5

Active
Texas Instruments

12-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 0.8 MM X 1.5 MM, 19 MOHM, GATE ESD PROTECTION

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD13385F5
Current - Continuous Drain (Id) @ 25°C4.3 A
Drain to Source Voltage (Vdss)12 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.8 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs5 nC
Input Capacitance (Ciss) (Max) @ Vds674 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-SMD, No Lead
Power Dissipation (Max) [Max]500 mW
Rds On (Max) @ Id, Vgs19 mOhm
Supplier Device Package3-PICOSTAR
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]8 V
Vgs(th) (Max) @ Id1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.47
10$ 0.36
100$ 0.22
500$ 0.20
1000$ 0.14
Digi-Reel® 1$ 0.47
10$ 0.36
100$ 0.22
500$ 0.20
1000$ 0.14
Tape & Reel (TR) 3000$ 0.10
Texas InstrumentsLARGE T&R 1$ 0.20
100$ 0.14
250$ 0.10
1000$ 0.07

Description

General part information

CSD13385F5 Series

This 12-V, 15-mΩ, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.

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