CMS16N06D-HF

Obsolete

HIGH POWER, CURRENT HANDING CAPABILITY MOSFET

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Discrete Semiconductor Products

Obsolete

HIGH POWER, CURRENT HANDING CAPABILITY MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	CMS16N06D-HF

Current - Continuous Drain (Id) @ 25°C	4.4 A, 16 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds	815 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	27 W, 2 W
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Rds On (Max) @ Id, Vgs	Supplier Device Package	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Mounting Type	FET Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]
Comchip Technology CMS16N06D-HF	50 mOhm	TO-252 (DPAK)	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	150 °C	MOSFET (Metal Oxide)	14 nC	2 W 27 W	Surface Mount	N-Channel	2.5 V	4.5 V 10 V	815 pF	60 V	4.4 A 16 A	20 V
Comchip Technology CMS16P06H8-HF	48 mOhm	DFN5x6	8-PowerTDFN	-55 °C	150 °C	MOSFET (Metal Oxide)		2 W 25 W	Surface Mount	P-Channel	2.5 V	4.5 V 10 V	1256 pF	60 V	5 A 16 A	20 V	PR-PAK	22 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 4.4A (Ta), 16A (Tc) 2W (Ta), 27W (Tc) Surface Mount TO-252 (DPAK)

Technical documentation and resources

No documents available