Discrete Semiconductor Products

SCS304AHGC9

LTB

DIODE SIL CARB 650V 4A TO220ACP

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Discrete Semiconductor Products

LTB

DIODE SIL CARB 650V 4A TO220ACP

Technical Specifications

Parameters and characteristics for this part

Specification	SCS304AHGC9

Capacitance @ Vr, F	200 pF
Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	20 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-220ACP
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.5 V

Part	Technology	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Speed	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Current - Average Rectified (Io)	Capacitance @ Vr, F	Package / Case	Supplier Device Package
Rohm Semiconductor SCS304AJTLL	SiC (Silicon Carbide) Schottky	0 ns	650 V	Surface Mount	500 mA	20 µA	1.5 V	175 ░C	4 A	200 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Rohm Semiconductor SCS304AHGC9	SiC (Silicon Carbide) Schottky	0 ns	650 V	Through Hole	500 mA	20 µA	1.5 V	175 ░C	4 A	200 pF	TO-220-2	TO-220ACP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 4A Through Hole TO-220ACP

Technical documentation and resources

No documents available