SCS304 Series
Manufacturer: Rohm Semiconductor
SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 4 A, 11 NC, TO-263AB
| Part | Technology | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction [Max] | Current - Average Rectified (Io) | Capacitance @ Vr, F | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | SiC (Silicon Carbide) Schottky | 0 ns | 650 V | Surface Mount | 500 mA | 20 µA | 1.5 V | 175 ░C | 4 A | 200 pF | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | |
Rohm Semiconductor | SiC (Silicon Carbide) Schottky | 0 ns | 650 V | Through Hole | 500 mA | 20 µA | 1.5 V | 175 ░C | 4 A | 200 pF | TO-220-2 | TO-220ACP |