Discrete Semiconductor Products

SIZ350DT-T1-GE3

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MOSFET 2N-CH 30V 18.5A 8PWR33

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Discrete Semiconductor Products

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MOSFET 2N-CH 30V 18.5A 8PWR33

Technical Specifications

Parameters and characteristics for this part

Specification	SIZ350DT-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	18.5 A, 30 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	20.3 nC
Input Capacitance (Ciss) (Max) @ Vds	940 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power - Max	3.7 W, 16.7 W
Rds On (Max) @ Id, Vgs	6.75 mOhm
Supplier Device Package	8-Power33 (3x3)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.4 V

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Configuration	Mounting Type	Power - Max	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SIZ350DT-T1-GE3	30 V	20.3 nC	2 N-Channel (Dual)	Surface Mount	3.7 W 16.7 W	2.4 V	18.5 A 30 A	940 pF	8-Power33 (3x3)	MOSFET (Metal Oxide)	6.75 mOhm	8-PowerWDFN	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 30V 18.5A (Ta), 30A (Tc) 3.7W (Ta), 16.7W (Tc) Surface Mount 8-Power33 (3x3)

Technical documentation and resources