SIZ350 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET 2N-CH 30V 18.5A 8PWR33
| Part | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Configuration | Mounting Type | Power - Max | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Technology | Rds On (Max) @ Id, Vgs | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 30 V | 20.3 nC | 2 N-Channel (Dual) | Surface Mount | 3.7 W 16.7 W | 2.4 V | 18.5 A 30 A | 940 pF | 8-Power33 (3x3) | MOSFET (Metal Oxide) | 6.75 mOhm | 8-PowerWDFN | -55 °C | 150 °C |