Discrete Semiconductor Products

FDC8878

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N-CHANNEL POWER TRENCH® MOSFET, 30 V, 8.0 A, 16 MΩ

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Discrete Semiconductor Products

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N-CHANNEL POWER TRENCH® MOSFET, 30 V, 8.0 A, 16 MΩ

Technical Specifications

Parameters and characteristics for this part

Specification	FDC8878

Current - Continuous Drain (Id) @ 25°C	8 A, 8 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Input Capacitance (Ciss) (Max) @ Vds	1040 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	SuperSOT™-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

N-Channel Power Trench® MOSFET, 30 V, 8.0 A, 16 mΩ

Part	Supplier Device Package	Mounting Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDC8878	SuperSOT™-6	Surface Mount	30 V	20 V	MOSFET (Metal Oxide)	4.5 V 10 V	1040 pF	N-Channel	8 A 8 A	16 mOhm	3 V	18 nC	SOT-23-6 Thin TSOT-23-6	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This N-Channel MOSFET is produced using an advanced Power Trench®process that has been optimized for rDS(on), switching performance.

Technical documentation and resources