FDC8878 Series

N-Channel Power Trench® MOSFET, 30 V, 8.0 A, 16 mΩ

Catalog

N-Channel Power Trench® MOSFET, 30 V, 8.0 A, 16 mΩ

Part	Supplier Device Package	Mounting Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDC8878	SuperSOT™-6	Surface Mount	30 V	20 V	MOSFET (Metal Oxide)	4.5 V 10 V	1040 pF	N-Channel	8 A 8 A	16 mOhm	3 V	18 nC	SOT-23-6 Thin TSOT-23-6	-55 °C	150 °C

N-Channel Power Trench® MOSFET, 30 V, 8.0 A, 16 mΩ

• Max rDS(on)= 16 mΩ at VGS= 10 V, ID= 8.0 A

• Max rDS(on)= 18 mΩ at VGS= 4.5 V, ID= 7.5 A

• High performance trench technology for extremely low rDS(on)

• Fast switching speed

• RoHS Compliant

This N-Channel MOSFET is produced using an advanced Power Trench®process that has been optimized for rDS(on), switching performance.