MSCMC120AM02CT6LIAG

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SIC 2N-CH 1200V 742A SP6C LI

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Discrete Semiconductor Products

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SIC 2N-CH 1200V 742A SP6C LI

Technical Specifications

Parameters and characteristics for this part

Specification	MSCMC120AM02CT6LIAG

Configuration	2 N Channel
Current - Continuous Drain (Id) @ 25°C	742 A
Drain to Source Voltage (Vdss)	1200 V
Drain to Source Voltage (Vdss)	1.2 kV
Gate Charge (Qg) (Max) @ Vgs	1932 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	33500 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	Module
Power - Max [Max]	3200 W
Rds On (Max) @ Id, Vgs	2.85 mOhm
Supplier Device Package	SP6C LI
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Technology	Power - Max [Max]	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Configuration	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C
Microchip Technology MSCMC120AM02CT6LIAG	-40 C	175 °C	2.85 mOhm	Silicon Carbide (SiC)	3200 W	Module	SP6C LI	33500 pF	1200 V	1.2 kV	1932 nC	Chassis Mount	2 N Channel	4 V	742 A
Microchip Technology MSCMC120AM03CT6LIAG	-40 C	175 °C	3.4 mOhm	Silicon Carbide (SiC)	2778 W	Module	SP6C LI		1200 V	1.2 kV		Chassis Mount	2 N Channel	4 V	631 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 1200V (1.2kV) 742A (Tc) 3200W (Tc) Chassis Mount SP6C LI

Technical documentation and resources

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