Specification	FDWS9508L-F085

Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	107 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	4840 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max) [Max]	214 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	4.9 mOhm
Supplier Device Package	8-PQFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	3 V

FDWS9508L_F085 Series

P-Channel PowerTrench® MOSFET -40V, -80A, 4.9mΩ

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Grade	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Technology	Package / Case	Mounting Type	Vgs (Max)	Qualification
ON Semiconductor FDWS9508L_F085	107 nC	4.5 V 10 V	3 V	40 V	214 W	-55 °C	175 ░C	P-Channel	Automotive	4.9 mOhm	4840 pF	8-PQFN (5x6)	MOSFET (Metal Oxide)	8-PowerTDFN	Surface Mount	16 V	AEC-Q101
ON Semiconductor FDWS9508L-F085	107 nC	4.5 V 10 V	3 V	40 V	214 W	-55 °C	175 ░C	P-Channel	Automotive	4.9 mOhm	4840 pF	8-PQFN (5x6)	MOSFET (Metal Oxide)	8-PowerTDFN	Surface Mount	16 V	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel PowerTrench®MOSFET -40 V, -80 A, 4.9 mΩ

Technical documentation and resources