Discrete Semiconductor Products

STTA2006PI

Obsolete

DIODE GEN PURP 600V 20A DOP3I

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 600V 20A DOP3I

Technical Specifications

Parameters and characteristics for this part

Specification	STTA2006PI

Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Package / Case	DOP3I-2 Insulated (Straight Leads)
Reverse Recovery Time (trr)	60 ns
Speed	500 ns, 200 mA
Supplier Device Package	DOP3I
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.75 V

Part	Voltage - Forward (Vf) (Max) @ If [Max]	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Supplier Device Package	Package / Case	Mounting Type	Speed	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]
STMicroelectronics STTA2006PI	1.75 V	Standard	600 V	60 ns	DOP3I	DOP3I-2 Insulated (Straight Leads)	Through Hole	200 mA 500 ns	100 µA	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Diode 600 V 20A Through Hole DOP3I

Technical documentation and resources

No documents available