Discrete Semiconductor Products

STSA1805-AP

Obsolete

LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	STSA1805-AP

Current - Collector (Ic) (Max) [Max]	5 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	150 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max [Max]	1.1 W
Supplier Device Package	TO-92AP
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

Low voltage fast-switching NPN power transistor

Part	Operating Temperature	Transistor Type	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Frequency - Transition	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case
STMicroelectronics STSA1805-AP	150 °C	NPN	TO-92AP	200	5 A	600 mV	Through Hole	150 MHz	1.1 W	100 nA	60 V	TO-226-3 TO-92-3 (TO-226AA) Formed Leads

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2000	$ 0.53

General part information

The device is manufactured in NPN Planar Technology by using a "Base Island" layout.

The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage

Technical documentation and resources