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E-MELF PKG
Discrete Semiconductor Products

JANTXV1N6627U

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Microchip Technology

DIODE SWITCHING 400V 1.75A 2-PIN E-MELF BAG

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E-MELF PKG
Discrete Semiconductor Products

JANTXV1N6627U

Active
Microchip Technology

DIODE SWITCHING 400V 1.75A 2-PIN E-MELF BAG

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTXV1N6627U
Current - Average Rectified (Io)1.75 A
Current - Reverse Leakage @ Vr2 µA
GradeMilitary
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-65 C
Package / CaseE, SQ-MELF
QualificationMIL-PRF-19500/590
Reverse Recovery Time (trr)30 ns
Speed200 mA, 500 ns
Supplier Device PackageD-5B
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]400 V
PartSpeedCapacitance @ Vr, FTechnologySupplier Device PackageOperating Temperature - Junction [Max]Operating Temperature - Junction [Min]Current - Reverse Leakage @ VrQualificationVoltage - DC Reverse (Vr) (Max) [Max]Package / CaseGradeMounting TypeCurrent - Average Rectified (Io)Reverse Recovery Time (trr)Voltage - Forward (Vf) (Max) @ If
E-MELF PKG
Microchip Technology
200 mA
500 ns
40 pF
Standard
D-5B
150 °C
-65 C
2 µA
MIL-PRF-19500/590
440 V
E
SQ-MELF
Military
Surface Mount
1.75 A
30 ns
E-MELF PKG
Microchip Technology
200 mA
500 ns
Standard
D-5B
150 °C
-65 C
2 µA
MIL-PRF-19500/590
400 V
E
SQ-MELF
Military
Surface Mount
1.75 A
30 ns
Microchip Technology
200 mA
500 ns
40 pF
Standard
150 °C
-65 C
2 µA
MIL-PRF-19500/590
440 V
E
Axial
Military
Through Hole
1.75 A
30 ns
1.35 V
E-MELF PKG
Microchip Technology
200 mA
500 ns
Standard
D-5B
150 °C
-65 C
2 µA
MIL-PRF-19500/590
400 V
E
SQ-MELF
Military
Surface Mount
1.75 A
30 ns
JANxxxxx
Microchip Technology
200 mA
500 ns
40 pF
Standard
A
Axial
150 °C
-65 C
2 µA
440 V
A
Axial
Through Hole
1.75 A
30 ns
Microchip Technology-JANS1N6109AUS Transient Voltage Suppressors (TVS) TVS Diode Single Bi-Dir 9.9V 500W 2-Pin E-MELF Waffle
Microchip Technology
200 mA
500 ns
Standard
D-5B
150 °C
-65 C
2 µA
MIL-PRF-19500/590
400 V
E
SQ-MELF
Military
Surface Mount
1.75 A
30 ns
1N5806TR
Microchip Technology
200 mA
500 ns
40 pF
Standard
A
Axial
150 °C
-65 C
2 µA
440 V
A
Axial
Through Hole
1.75 A
30 ns
SQ-MELF, A PKG
Microchip Technology
200 mA
500 ns
40 pF
Standard
A-MELF
150 °C
-65 C
2 µA
440 V
Surface Mount
1.75 A
30 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 34.83
Microchip DirectN/A 1$ 37.51

Description

General part information

JANTXV1N6627US-Rectifier Series

This "Ultrafast Recovery" rectifier diode series is military qualified to MIL-PRF19500/590 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidlessglass construction using an internal "Category I" metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a "US" suffix (see separate data sheet for 1N6626US thru 1N6631US). Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages.

Documents

Technical documentation and resources