Discrete Semiconductor Products

SI4972DY-T1-GE3

Obsolete

MOSFET 2N-CH 30V 10.8A 8-SOIC

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 30V 10.8A 8-SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI4972DY-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	7.2 A, 10.8 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs [Max]	28 nC
Input Capacitance (Ciss) (Max) @ Vds	1080 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max	3.1 W, 2.5 W
Rds On (Max) @ Id, Vgs	14.5 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power - Max	Configuration	Rds On (Max) @ Id, Vgs	Package / Case	Package / Case [y]	Package / Case [x]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SI4972DY-T1-GE3	MOSFET (Metal Oxide)	28 nC	1080 pF	3 V	Surface Mount	7.2 A 10.8 A	2.5 W 3.1 W	2 N-Channel (Dual)	14.5 mOhm	8-SOIC	3.9 mm	0.154 in	-55 °C	150 °C	8-SOIC	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 10.8A, 7.2A 3.1W, 2.5W Surface Mount 8-SOIC

Technical documentation and resources

No documents available