SI4972 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET 2N-CH 30V 10.8A 8-SOIC
| Part | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Power - Max | Configuration | Rds On (Max) @ Id, Vgs | Package / Case | Package / Case [y] | Package / Case [x] | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 28 nC | 1080 pF | 3 V | Surface Mount | 7.2 A 10.8 A | 2.5 W 3.1 W | 2 N-Channel (Dual) | 14.5 mOhm | 8-SOIC | 3.9 mm | 0.154 in | -55 °C | 150 °C | 8-SOIC | 30 V |