Specification	NVH4L040N120M3S

Current - Continuous Drain (Id) @ 25°C	54 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	75 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1700 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max) [Max]	231 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	54 mOhm
Supplier Device Package	TO-247-4L
Technology	SiC (Silicon Carbide Junction Transistor)
Vgs (Max) [Max]	18 V
Vgs (Max) [Min]	-3 V
Vgs(th) (Max) @ Id	4.4 V

NVH4L040N120M3S Series

Silicon Carbide (SiC) MOSFET- EliteSiC, 40 mohm, 1200 V, M3S, TO247-4L

Part	Grade	Supplier Device Package	Vgs(th) (Max) @ Id	Qualification	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs (Max) [Max]	Vgs (Max) [Min]	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Package / Case	FET Type
ON Semiconductor NVH4L040N120M3S	Automotive	TO-247-4L	4.4 V	AEC-Q101	54 mOhm	-55 °C	175 ░C	18 V	SiC (Silicon Carbide Junction Transistor)	54 A	231 W	1700 pF	Through Hole	18 V	-3 V	75 nC	1200 V	TO-247-4	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 19.35
		30	$ 15.66
		120	$ 14.74
		510	$ 13.36
Newark	Each	250	$ 12.41
ON Semiconductor	N/A	1	$ 12.16

Description

General part information

NVH4L040N120M3S Series

EliteSiC MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.