NVH4L040N120M3S Series

Silicon Carbide (SiC) MOSFET- EliteSiC, 40 mohm, 1200 V, M3S, TO247-4L

Catalog

Silicon Carbide (SiC) MOSFET- EliteSiC, 40 mohm, 1200 V, M3S, TO247-4L

Part	Grade	Supplier Device Package	Vgs(th) (Max) @ Id	Qualification	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs (Max) [Max]	Vgs (Max) [Min]	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Package / Case	FET Type
ON Semiconductor NVH4L040N120M3S	Automotive	TO-247-4L	4.4 V	AEC-Q101	54 mOhm	-55 °C	175 ░C	18 V	SiC (Silicon Carbide Junction Transistor)	54 A	231 W	1700 pF	Through Hole	18 V	-3 V	75 nC	1200 V	TO-247-4	N-Channel

Catalog

Silicon Carbide (SiC) MOSFET- EliteSiC, 40 mohm, 1200 V, M3S, TO247-4L

Key Features

• Typical RDS(on) = 40.8mΩ at Vgs =18V, Id = 25A

• Qualified for Automotive According to AEC−Q101

• New M3S technology: 40.8mohm RDS(ON) with low EON and EOFF losses

• 15V to 18V Gate Drive

• Devices are Pb−Free and are RoHS Compliant

Description

EliteSiC MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.