Specification	NVTYS003N03CLTWG

Current - Continuous Drain (Id) @ 25°C	98 A, 23 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	26 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1870 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power Dissipation (Max)	59 W, 3 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	3.6 mOhm
Supplier Device Package	8-LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

NVTYS003N03CL Series

MOSFET – Power, Single, N-Channel

Part	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Technology	Qualification	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id [Max]	FET Type	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
ON Semiconductor NVTYS003N03CLTWG	3 W 59 W	4.5 V 10 V	1870 pF	20 V	MOSFET (Metal Oxide)	AEC-Q101	30 V	3.6 mOhm	Surface Mount	8-LFPAK56 SOT-1205	26 nC	23 A 98 A	2.2 V	N-Channel	Automotive	-55 °C	175 ░C	8-LFPAK

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFET – Power, Single, N-Channel, 30 V, 98 A

Technical documentation and resources