MOSFET – Power, Single, N-Channel
MOSFET – Power, Single, N-Channel
| Part | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Technology | Qualification | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Mounting Type | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id [Max] | FET Type | Grade | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 3 W 59 W | 4.5 V 10 V | 1870 pF | 20 V | MOSFET (Metal Oxide) | AEC-Q101 | 30 V | 3.6 mOhm | Surface Mount | 8-LFPAK56 SOT-1205 | 26 nC | 23 A 98 A | 2.2 V | N-Channel | Automotive | -55 °C | 175 ░C | 8-LFPAK |