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Microchip Technology-GRP-A-DATA-JAN2N2904 GP BJT Trans GP BJT PNP 40V 0.6A 600mW 3-Pin TO-39 Bag
Discrete Semiconductor Products

2N3507A

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Microchip Technology

TRANS GP BJT NPN 50V 3A 1000MW 3-PIN TO-39 BAG

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Microchip Technology-GRP-A-DATA-JAN2N2904 GP BJT Trans GP BJT PNP 40V 0.6A 600mW 3-Pin TO-39 Bag
Discrete Semiconductor Products

2N3507A

Active
Microchip Technology

TRANS GP BJT NPN 50V 3A 1000MW 3-PIN TO-39 BAG

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N3507A
Current - Collector (Ic) (Max) [Max]3 A
Current - Collector Cutoff (Max) [Max]1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]30
Mounting TypeThrough Hole
Package / CaseTO-39-3 Metal Can, TO-205AD
Power - Max [Max]1 W
Supplier Device PackageTO-39 (TO-205AD)
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 15.37
Microchip DirectN/A 1$ 16.55
NewarkEach 100$ 15.37
500$ 14.78

Description

General part information

2N3507A-Transistor Series

This family of 2N3506 through 2N3507A high-frequency, epitaxial planar NPN transistors have a low saturation voltage and are military qualified up to the JANS level for high-reliability applications. These transistors are available in a TO-205AD (TO-39) standard legnth leads, no suffix,a TO-205AA (TO-5) Long Leads, L Suffix and a low profile surfacemount U4 packages. Microchip also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.

Documents

Technical documentation and resources