Discrete Semiconductor Products

IRFB9N65A

Obsolete

MOSFET N-CH 650V 8.5A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 650V 8.5A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IRFB9N65A

Current - Continuous Drain (Id) @ 25°C	8.5 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	48 nC
Input Capacitance (Ciss) (Max) @ Vds	1417 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	167 W
Rds On (Max) @ Id, Vgs	930 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	FET Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division IRFB9N65A	1417 pF	-55 °C	150 °C	30 V	Through Hole	930 mOhm	TO-220-3	TO-220AB	N-Channel	4 V	650 V	MOSFET (Metal Oxide)	167 W	8.5 A	48 nC	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 8.5A (Tc) 167W (Tc) Through Hole TO-220AB

Technical documentation and resources