IRFB9N65 Series

Catalog

MOSFET N-CH 650V 8.5A TO220AB

Part	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	FET Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division IRFB9N65A	1417 pF	-55 °C	150 °C	30 V	Through Hole	930 mOhm	TO-220-3	TO-220AB	N-Channel	4 V	650 V	MOSFET (Metal Oxide)	167 W	8.5 A	48 nC	10 V