Discrete Semiconductor Products

RF301B2STL

Obsolete

DIODE GEN PURP 200V 3A CPD

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 200V 3A CPD

Technical Specifications

Parameters and characteristics for this part

Specification	RF301B2STL

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	25 ns
Speed	200 mA, 500 ns
Supplier Device Package	CPD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	930 mV

Super Fast Recovery Diode

Part	Mounting Type	Supplier Device Package	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Speed	Technology	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction	Current - Average Rectified (Io)
Rohm Semiconductor RF301B2STL	Surface Mount	CPD	DPAK (2 Leads + Tab) SC-63 TO-252-3	200 V	10 µA	200 mA 500 ns	Standard	25 ns	930 mV	150 °C	3 A
Rohm Semiconductor RF301BGE2STL	Surface Mount	TO-252	DPAK (2 Leads + Tab) SC-63 TO-252-3	200 V	10 µA	200 mA 500 ns	Standard	25 ns	930 mV	150 °C	3 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

RF301BGE2S is the silicon epitaxial planar type Fast Recovery Diode.

Technical documentation and resources