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Discrete Semiconductor Products

MNS2N2222AUBP/TR

Active
Microchip Technology

SMALL-SIGNAL BJT ROHS COMPLIANT: YES

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UB
Discrete Semiconductor Products

MNS2N2222AUBP/TR

Active
Microchip Technology

SMALL-SIGNAL BJT ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMNS2N2222AUBP/TR
Current - Collector (Ic) (Max) [Max]800 mA
Current - Collector Cutoff (Max) [Max]50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
GradeMilitary
Mounting TypeSurface Mount
Package / Case3-SMD, No Lead
Power - Max [Max]500 mW
QualificationMIL-PRF-19500/255
Supplier Device PackageUB
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1 V
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 56$ 12.65
Microchip DirectN/A 1$ 12.65
100$ 11.75
500$ 11.30
1000$ 10.66
NewarkEach 1$ 12.65
100$ 11.75
500$ 11.30

Description

General part information

MNS2N2222AUBP-Transistor-PIND Series

This specification covers the performance requirements for NPN, silicon, switching 2N2221 and 2N2222 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/255 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. RHA level designators "E", "K", "U", "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

Documents

Technical documentation and resources