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ONSEMI BAS40LT1G
Discrete Semiconductor Products

FDN86265P

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ON Semiconductor

P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET -150V, -0.8A, 1.2Ω

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ONSEMI BAS40LT1G
Discrete Semiconductor Products

FDN86265P

Active
ON Semiconductor

P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET -150V, -0.8A, 1.2Ω

Technical Specifications

Parameters and characteristics for this part

SpecificationFDN86265P
Current - Continuous Drain (Id) @ 25°C800 mA
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]4.1 nC
Input Capacitance (Ciss) (Max) @ Vds210 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)1.5 W
Rds On (Max) @ Id, Vgs1.2 Ohm
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.01
10$ 0.82
100$ 0.64
500$ 0.54
1000$ 0.44
Digi-Reel® 1$ 1.01
10$ 0.82
100$ 0.64
500$ 0.54
1000$ 0.44
Tape & Reel (TR) 3000$ 0.42
6000$ 0.40
9000$ 0.38
NewarkEach (Supplied on Cut Tape) 1$ 0.83
10$ 0.82
25$ 0.76
50$ 0.70
100$ 0.63
250$ 0.58
ON SemiconductorN/A 1$ 0.35

Description

General part information

FDN86265P Series

This P-Channel MOSFET is produced using an advanced PowerTrench® process that has been optimized for the on-state resistance and yet maintain superior switching performance.