
Discrete Semiconductor Products
FDN86265P
ActiveON Semiconductor
P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET -150V, -0.8A, 1.2Ω
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Discrete Semiconductor Products
FDN86265P
ActiveON Semiconductor
P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET -150V, -0.8A, 1.2Ω
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDN86265P |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 800 mA |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 4.1 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 210 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) | 1.5 W |
| Rds On (Max) @ Id, Vgs | 1.2 Ohm |
| Supplier Device Package | SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.01 | |
| 10 | $ 0.82 | |||
| 100 | $ 0.64 | |||
| 500 | $ 0.54 | |||
| 1000 | $ 0.44 | |||
| Digi-Reel® | 1 | $ 1.01 | ||
| 10 | $ 0.82 | |||
| 100 | $ 0.64 | |||
| 500 | $ 0.54 | |||
| 1000 | $ 0.44 | |||
| Tape & Reel (TR) | 3000 | $ 0.42 | ||
| 6000 | $ 0.40 | |||
| 9000 | $ 0.38 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 0.83 | |
| 10 | $ 0.82 | |||
| 25 | $ 0.76 | |||
| 50 | $ 0.70 | |||
| 100 | $ 0.63 | |||
| 250 | $ 0.58 | |||
| ON Semiconductor | N/A | 1 | $ 0.35 | |
Description
General part information
FDN86265P Series
This P-Channel MOSFET is produced using an advanced PowerTrench® process that has been optimized for the on-state resistance and yet maintain superior switching performance.
Documents
Technical documentation and resources