Specification	NTMFS010N10GTWG

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3950 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max) [Max]	3 W
Rds On (Max) @ Id, Vgs	10.8 mOhm
Supplier Device Package	8-PQFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

NTMFS010N10G Series

MOSFET - Power, Single, N-Channel, PQFN8, 100V, 10.8mΩ, 83A

Part	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Mounting Type	FET Type	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package
ON Semiconductor NTMFS010N10GTWG	4 V	-55 °C	175 ░C	11 A	3 W	8-PowerTDFN	3950 pF	100 V	10 V	20 V	Surface Mount	N-Channel	10.8 mOhm	MOSFET (Metal Oxide)	8-PQFN (5x6)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.63
		10	$ 2.38
		100	$ 1.66
		500	$ 1.36
		1000	$ 1.26
	Digi-Reel®	1	$ 3.63
		10	$ 2.38
		100	$ 1.66
		500	$ 1.36
		1000	$ 1.26
	Tape & Reel (TR)	3000	$ 1.23
Newark	Each	2500	$ 1.32
		5000	$ 1.28
ON Semiconductor	N/A	1	$ 1.13

Description

General part information

NTMFS010N10G Series

This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.