NTMFS010N10G Series

MOSFET - Power, Single, N-Channel, PQFN8, 100V, 10.8mΩ, 83A

Catalog

MOSFET - Power, Single, N-Channel, PQFN8, 100V, 10.8mΩ, 83A

Part	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Mounting Type	FET Type	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package
ON Semiconductor NTMFS010N10GTWG	4 V	-55 °C	175 ░C	11 A	3 W	8-PowerTDFN	3950 pF	100 V	10 V	20 V	Surface Mount	N-Channel	10.8 mOhm	MOSFET (Metal Oxide)	8-PQFN (5x6)

Catalog

MOSFET - Power, Single, N-Channel, PQFN8, 100V, 10.8mΩ, 83A

Key Features

• Shielded Gate MOSFET Technology

• Max rDS(on)= 10.8 mΩ at VGS= 10 V, ID= 83 A

• Small Footprint (5 x 6 mm) for Compact Design

• Low RDS(on) to Minimize Conduction Losses

• Wide SOA

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Description

This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.