Discrete Semiconductor Products
STP4N52K3
ActiveSTMicroelectronics
N-CHANNEL 525 V, 2.5 A, 2.1 OHM TYP., SUPERMESH3(TM) POWER MOSFET IN TO-220 PACKAGE
Discrete Semiconductor Products
STP4N52K3
ActiveSTMicroelectronics
N-CHANNEL 525 V, 2.5 A, 2.1 OHM TYP., SUPERMESH3(TM) POWER MOSFET IN TO-220 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STP4N52K3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.5 A |
| Drain to Source Voltage (Vdss) | 525 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 11 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 334 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 45 W |
| Rds On (Max) @ Id, Vgs | 2.6 Ohm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 1.00 | |
| 50 | $ 0.80 | |||
| 100 | $ 0.64 | |||
| 500 | $ 0.54 | |||
| 1000 | $ 0.53 | |||
Description
General part information
STP4N52K3 Series
These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
Documents
Technical documentation and resources