Discrete Semiconductor Products
LND250K1-G
ActiveMicrochip Technology
MOSFET, DEPLETION-MODE, 500V, 1K OHM 3 SOT-23 1.3MM T/R ROHS COMPLIANT: YES
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Search across all available documentation for this part.
Discrete Semiconductor Products
LND250K1-G
ActiveMicrochip Technology
MOSFET, DEPLETION-MODE, 500V, 1K OHM 3 SOT-23 1.3MM T/R ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | LND250K1-G |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 13 mA |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 0 V |
| FET Feature | Depletion Mode |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 10 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) | 360 mW |
| Rds On (Max) @ Id, Vgs [Max] | 1000 Ohm |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.53 | |
| 25 | $ 0.45 | |||
| 100 | $ 0.44 | |||
| Digi-Reel® | 1 | $ 0.53 | ||
| 25 | $ 0.45 | |||
| 100 | $ 0.44 | |||
| Tape & Reel (TR) | 3000 | $ 0.44 | ||
| Microchip Direct | T/R | 1 | $ 0.53 | |
| 25 | $ 0.45 | |||
| 100 | $ 0.41 | |||
| 1000 | $ 0.38 | |||
| Newark | Each (Supplied on Full Reel) | 3000 | $ 0.43 | |
Description
General part information
LND250 Series
The LND250 is a high voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected.
The LND250 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.
Documents
Technical documentation and resources