Discrete Semiconductor Products

BC337-25 A1G

Obsolete

BIPOLAR TRANSISTORS - BJT 50V, 0.8A, NPN BIPOLAR TRANSISTOR

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

BIPOLAR TRANSISTORS - BJT 50V, 0.8A, NPN BIPOLAR TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	BC337-25 A1G

Current - Collector (Ic) (Max) [Max]	800 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	160
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max [Max]	625 mW
Supplier Device Package	TO-92
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	700 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	45 V

Part	Package / Case	Package / Case	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Current - Collector (Ic) (Max) [Max]
Taiwan Semiconductor Corporation BC337-40 B1G	TO-226AA	TO-226-3 TO-92-3	TO-92	150 °C	-55 °C	NPN	700 mV	100 MHz	250	625 mW	100 nA	45 V	Through Hole	800 mA
Taiwan Semiconductor Corporation BC337-40 A1G		TO-226-3 TO-92-3 (TO-226AA) Formed Leads	TO-92	150 °C	-55 °C	NPN	700 mV	100 MHz	250	625 mW	100 nA	45 V	Through Hole	800 mA
Taiwan Semiconductor Corporation BC337-16 A1G		TO-226-3 TO-92-3 (TO-226AA) Formed Leads	TO-92	150 °C	-55 °C	NPN	700 mV	100 MHz	100	625 mW	100 nA	45 V	Through Hole	800 mA
Taiwan Semiconductor Corporation BC337-25 A1G		TO-226-3 TO-92-3 (TO-226AA) Formed Leads	TO-92	150 °C	-55 °C	NPN	700 mV	100 MHz	160	625 mW	100 nA	45 V	Through Hole	800 mA
Taiwan Semiconductor Corporation BC337-16 B1G	TO-226AA	TO-226-3 TO-92-3	TO-92	150 °C	-55 °C	NPN	700 mV	100 MHz	100	625 mW	100 nA	45 V	Through Hole	800 mA
Taiwan Semiconductor Corporation BC337-25 B1G	TO-226AA	TO-226-3 TO-92-3	TO-92	150 °C	-55 °C	NPN	700 mV	100 MHz	160	625 mW	100 nA	45 V	Through Hole	800 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 45 V 800 mA 100MHz 625 mW Through Hole TO-92

Technical documentation and resources