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Discrete Semiconductor Products

FDMA3027PZ-F130

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ON Semiconductor

30V 3.3A 87MΩ@10V,3.3A 1.4W 1.9V MICROFET-6(2X2) MOSFETS ROHS

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Product Image
Discrete Semiconductor Products

FDMA3027PZ-F130

Active
ON Semiconductor

30V 3.3A 87MΩ@10V,3.3A 1.4W 1.9V MICROFET-6(2X2) MOSFETS ROHS

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMA3027PZ-F130
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-VDFN Exposed Pad
Power - Max [Max]700 mW
Supplier Device Package6-MicroFET (2x2)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 479$ 0.63
LCSCPiece 1$ 1.71
200$ 0.66
500$ 0.64
1000$ 0.63

Description

General part information

FDMA3027PZ Series

This device is designed specifically as a single package solution for dual switching requirements such as gate driver for larger Mosfets. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. G-S zener has been added to enhance ESD voltage level.