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SOT1220
Discrete Semiconductor Products

PMPB47XP,115

Active
Nexperia USA Inc.

30 V, SINGLE P-CHANNEL TRENCH MOSFET

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SOT1220
Discrete Semiconductor Products

PMPB47XP,115

Active
Nexperia USA Inc.

30 V, SINGLE P-CHANNEL TRENCH MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationPMPB47XP,115
Current - Continuous Drain (Id) @ 25°C4 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]21 nC
Input Capacitance (Ciss) (Max) @ Vds1365 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-UDFN Exposed Pad
Power Dissipation (Max)12.5 W, 1.7 W
Rds On (Max) @ Id, Vgs58 mOhm
Supplier Device PackageDFN2020MD-6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max) @ Id900 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.38
10$ 0.29
100$ 0.17
500$ 0.16
1000$ 0.11
Digi-Reel® 1$ 0.38
10$ 0.29
100$ 0.17
500$ 0.16
1000$ 0.11
N/A 0$ 0.64
Tape & Reel (TR) 3000$ 0.10
6000$ 0.10
9000$ 0.09
30000$ 0.08
75000$ 0.08

Description

General part information

PMPB47 Series

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.