30 V, single P-channel Trench MOSFET
30 V, single P-channel Trench MOSFET
| Part | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | FET Type | Technology | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Package / Case | Supplier Device Package | Vgs (Max) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Operating Temperature [Max] | Operating Temperature [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 4 A | 1.7 W 12.5 W | P-Channel | MOSFET (Metal Oxide) | Surface Mount | 1365 pF | 1.8 V | 4.5 V | 6-UDFN Exposed Pad | DFN2020MD-6 | 12 V | 58 mOhm | 21 nC | 30 V | 900 mV | 150 °C | -55 °C |