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8 MSOP EP
RF and Wireless

HMC435AMS8GE

Active
Analog Devices

RF SWITCH, NON-REFLECTIVE, SPDT, 4 GHZ, -40 TO 85 °C, MSOP-EP-8

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsHMC435A: SPDT Non-Reflective Switch, DC - 4 GHz Data SheetHMC_A/B Process FIT Test Report
8 MSOP EP
RF and Wireless

HMC435AMS8GE

Active
Analog Devices

RF SWITCH, NON-REFLECTIVE, SPDT, 4 GHZ, -40 TO 85 °C, MSOP-EP-8

Deep-Dive with AI

DocumentsHMC435A: SPDT Non-Reflective Switch, DC - 4 GHz Data SheetHMC_A/B Process FIT Test Report

Technical Specifications

Parameters and characteristics for this part

SpecificationHMC435AMS8GE
CircuitSPDT
IIP353 dBm
Impedance50 Ohms
Insertion Loss0.8 dB
Isolation48 dB
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
P1dB30 dBm
Package / CaseExposed Pad, 8-TSSOP, 8-MSOP
Package / Case [custom]0.118 in, 3 mm
RF TypeGeneral Purpose
Supplier Device Package8-MSOP-EP
Test Frequency2.5 GHz

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyStrip 1$ 6.36
10$ 4.30
25$ 3.77
100$ 3.17
250$ 2.88
500$ 2.70
1000$ 2.56
2500$ 2.40
NewarkEach 1$ 6.17
10$ 4.07
25$ 3.52
50$ 3.21
100$ 2.90
250$ 2.59
500$ 2.41

Description

General part information

HMC435A Series

The HMC435AMS8G(E) is a non-reflective DC to 4 GHz GaAs MESFET SPDT switch in a low cost 8 lead MSOP8G surface mount package with exposed ground paddle. The switch is ideal for cellular/3G and WiMAX/4G applications yielding up to 60 dB isolation, low 0.8 dB insertion loss and +50 dBm input IP3. Power handling is excellent up through the 3.8 GHz WiMAX band with the switch offering a P1dB compression of +30 dBm. On-chip circuitry allows positive voltage control of 0/+5 Volts at very low DC currents.APPLICATIONSBasestations & RepeatersCellular/3G and WiMAX/4GInfrastructure and Access PointsCATV/CMTSTest Instrumentation