Discrete Semiconductor Products

SIHF640S-GE3

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MOSFET N-CH 200V 18A D2PAK

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Discrete Semiconductor Products

Active

MOSFET N-CH 200V 18A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIHF640S-GE3

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	70 nC
Input Capacitance (Ciss) (Max) @ Vds	1300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	130 W, 3.1 W
Rds On (Max) @ Id, Vgs	180 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division SIHF640S-GE3	200 V	Surface Mount	1300 pF	-55 °C	150 °C	70 nC	18 A	N-Channel	4 V	MOSFET (Metal Oxide)	180 mOhm	TO-263 (D2PAK)	20 V	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.1 W 130 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 200 V 18A (Tc) 3.1W (Ta), 130W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources