SIHF640 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 200V 18A D2PAK
| Part | Drain to Source Voltage (Vdss) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | FET Type | Vgs(th) (Max) @ Id | Technology | Rds On (Max) @ Id, Vgs | Supplier Device Package | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 200 V | Surface Mount | 1300 pF | -55 °C | 150 °C | 70 nC | 18 A | N-Channel | 4 V | MOSFET (Metal Oxide) | 180 mOhm | TO-263 (D2PAK) | 20 V | 10 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 3.1 W 130 W |