
Deep-Dive with AI
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Deep-Dive with AI
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Technical Specifications
Parameters and characteristics for this part
| Specification | SGSD100 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 25 A |
| Current - Collector Cutoff (Max) [Max] | 500 çA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 500 hFE |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 130 W |
| Supplier Device Package | TO-247-3 |
| Vce Saturation (Max) @ Ib, Ic | 3.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 80 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 1.50 | |
Description
General part information
SGSD100 Series
Bipolar (BJT) Transistor NPN - Darlington 80 V 25 A 130 W Through Hole TO-247-3
Documents
Technical documentation and resources