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TO-247-3 HiP
Discrete Semiconductor Products

SGSD100

Obsolete
STMicroelectronics

TRANS NPN DARL 80V 25A TO247-3

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DocumentsDatasheet
TO-247-3 HiP
Discrete Semiconductor Products

SGSD100

Obsolete
STMicroelectronics

TRANS NPN DARL 80V 25A TO247-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSGSD100
Current - Collector (Ic) (Max) [Max]25 A
Current - Collector Cutoff (Max) [Max]500 çA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]500 hFE
Mounting TypeThrough Hole
Package / CaseTO-247-3
Power - Max [Max]130 W
Supplier Device PackageTO-247-3
Vce Saturation (Max) @ Ib, Ic3.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 1.50

Description

General part information

SGSD100 Series

Bipolar (BJT) Transistor NPN - Darlington 80 V 25 A 130 W Through Hole TO-247-3

Documents

Technical documentation and resources