SCT040W120G3-4
ActiveSILICON CARBIDE POWER MOSFET 1200 V, 40 MOHM TYP., 40 A IN AN HIP247-4 PACKAGE
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SCT040W120G3-4
ActiveSILICON CARBIDE POWER MOSFET 1200 V, 40 MOHM TYP., 40 A IN AN HIP247-4 PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | SCT040W120G3-4 |
|---|---|
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V, 15 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1329 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 200 °C |
| Operating Temperature [Min] | -55 ░C |
| Package / Case | TO-247-4 |
| Power Dissipation (Max) | 312 W |
| Rds On (Max) @ Id, Vgs | 54 mOhm |
| Supplier Device Package | TO-247-4 |
| Vgs (Max) [Max] | 18 V, -5 V |
| Vgs(th) (Max) @ Id | 4.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SCT040W120G3-4 Series
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rdgeneration SiC MOSFET technology. The device features a very low RDS(on)over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Documents
Technical documentation and resources