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3-PICOSTAR
Discrete Semiconductor Products

CSD25485F5T

Active
Texas Instruments

-20-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 0.8 MM X 1.5 MM, 42 MOHM, GATE ESD PROTECTION

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3-PICOSTAR
Discrete Semiconductor Products

CSD25485F5T

Active
Texas Instruments

-20-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 0.8 MM X 1.5 MM, 42 MOHM, GATE ESD PROTECTION

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD25485F5T
Current - Continuous Drain (Id) @ 25°C5.3 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)1.8 V, 8 V
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]533 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-XFDFN
Power Dissipation (Max)1.4 W
Rds On (Max) @ Id, Vgs35 mOhm
Supplier Device Package3-PICOSTAR
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]-12 V
Vgs(th) (Max) @ Id1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.97
10$ 0.79
100$ 0.62
Digi-Reel® 1$ 0.97
10$ 0.79
100$ 0.62
Tape & Reel (TR) 250$ 0.37
500$ 0.32
1250$ 0.30
Texas InstrumentsSMALL T&R 1$ 0.83
100$ 0.57
250$ 0.44
1000$ 0.29

Description

General part information

CSD25485F5 Series

This 29.7-mΩ, –20-V, P-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.

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