Discrete Semiconductor Products
FDD86367-F085
ActiveON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 80V, 100A, 4.2 MΩ,
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Discrete Semiconductor Products
FDD86367-F085
ActiveON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 80V, 100A, 4.2 MΩ,
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDD86367-F085 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 88 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 4840 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) [Max] | 227 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 4.2 mOhm |
| Supplier Device Package | TO-252AA |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 2.71 | |
| 10 | $ 1.75 | |||
| 100 | $ 1.21 | |||
| 500 | $ 0.97 | |||
| 1000 | $ 0.90 | |||
| Digi-Reel® | 1 | $ 2.71 | ||
| 10 | $ 1.75 | |||
| 100 | $ 1.21 | |||
| 500 | $ 0.97 | |||
| 1000 | $ 0.90 | |||
| Tape & Reel (TR) | 2500 | $ 0.82 | ||
| Newark | Each (Supplied on Full Reel) | 1 | $ 1.11 | |
| 3000 | $ 1.05 | |||
| 6000 | $ 0.99 | |||
| 12000 | $ 0.89 | |||
| 18000 | $ 0.86 | |||
| 30000 | $ 0.82 | |||
| ON Semiconductor | N/A | 1 | $ 0.76 | |
Description
General part information
FDD86367_F085 Series
Automotive Power MOSFET in a DPAK package designed for compact and efficient designs and including high thermal performance. Gull-wings leads for an improved Board Level Reliability performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Documents
Technical documentation and resources