FDD86367_F085 Series

N-Channel PowerTrench® MOSFET 80V, 100A, 4.2 mΩ,

Catalog

N-Channel PowerTrench® MOSFET 80V, 100A, 4.2 mΩ,

Part	Package / Case	Supplier Device Package	Qualification	Mounting Type	FET Type	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Technology	Grade	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDD86367-F085	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252AA	AEC-Q101	Surface Mount	N-Channel	227 W	4 V	4.2 mOhm	80 V	-55 °C	175 ░C	10 V	4840 pF	20 V	88 nC	MOSFET (Metal Oxide)	Automotive	100 A

Catalog

N-Channel PowerTrench® MOSFET 80V, 100A, 4.2 mΩ,

Key Features

• Low RDS(on)

• Low QG(tot)and Capacitance

• RoHS Compliant

• AEC−Q101 Qualified and PPAP Capable

Description

Automotive Power MOSFET in a DPAK package designed for compact and efficient designs and including high thermal performance. Gull-wings leads for an improved Board Level Reliability performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.