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STGAP2SICSTR
Isolators

STGAP2SICSTR

Active
STMicroelectronics

GATE DRIVER, 1 CHANNELS, ISOLATED, HALF BRIDGE, SIC MOSFET, 8 PINS, WSOIC

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STGAP2SICSTR
Isolators

STGAP2SICSTR

Active
STMicroelectronics

GATE DRIVER, 1 CHANNELS, ISOLATED, HALF BRIDGE, SIC MOSFET, 8 PINS, WSOIC

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGAP2SICSTR
Approval AgencyUL
Common Mode Transient Immunity (Min) [Min]100 V/ns
Current - Output High, Low [custom]4 A
Current - Output High, Low [custom]4 A
Current - Peak Output4 A
Mounting TypeSurface Mount
Number of Channels [custom]1
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 C
Package / Case8-SOIC (0.295", 7.50mm Width)
Propagation Delay tpLH / tpHL (Max)90 ns
Pulse Width Distortion (Max) [Max]20 ns
Rise / Fall Time (Typ)30 ns
Rise / Fall Time (Typ)30 ns
Supplier Device Package8-SO
TechnologyCapacitive Coupling
Voltage - Output Supply [Max]5.5 V
Voltage - Output Supply [Min]3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 950$ 6.86

Description

General part information

STGAP2SICS Series

The STGAP2SICS is a single gate driver which provides galvanic isolation between the gate driving channel and the low voltage control and interface circuitry.

The gate driver is characterized by 4 A capability and rail-to-rail outputs, making the device also suitable for mid and high power applications such as power conversion and motor driver inverters in industrial applications. The device is available in two different configurations. The configuration with separated output pins allows to independently optimize turn-on and turn-off by using dedicated gate resistors. The configuration featuring single output pin and Miller CLAMP function prevents gate spikes during fast commutations in half-bridge topologies. Both configurations provide high flexibility and bill of material reduction for external components.

The device integrates protection functions: UVLO with optimized value for SiC MOSFETs and thermal shut down are included to facilitate the design of highly reliable systems. Dual input pins allow the selection of signal polarity control and implementation of HW interlocking protection to avoid cross-conduction in case of controller malfunction. The input to output propagation delay is less than 75 ns, which delivers high PWM control accuracy. A standby mode is available to reduce idle power consumption.