Discrete Semiconductor Products
BULD742CT4
ActiveSTMicroelectronics
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Discrete Semiconductor Products
BULD742CT4
ActiveSTMicroelectronics
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Technical Specifications
Parameters and characteristics for this part
| Specification | BULD742CT4 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 4 A |
| Current - Collector Cutoff (Max) [Max] | 250 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 25 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power - Max [Max] | 45 W |
| Supplier Device Package | DPAK |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 400 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1115 | $ 1.54 | |
Description
General part information
BULD742C Series
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast.
Documents
Technical documentation and resources