Discrete Semiconductor Products

FDD3580

Obsolete

MOSFET N-CH 80V 7.7A D-PAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 80V 7.7A D-PAK

Technical Specifications

Parameters and characteristics for this part

Specification	FDD3580

Current - Continuous Drain (Id) @ 25°C	7.7 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10 V, 49 nC
Input Capacitance (Ciss) (Max) @ Vds	1760 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	3.8 W, 42 W
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs (Max)	Vgs(th) (Max) @ Id
ON Semiconductor FDD3580	10 V 49 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	3.8 W 42 W	7.7 A	TO-252 (DPAK)	N-Channel	Surface Mount	6 V 10 V	-55 °C	175 ░C	1760 pF	80 V	20 V	4 V
ON Semiconductor FDD3580	10 V 49 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	3.8 W 42 W	7.7 A	TO-252AA	N-Channel	Surface Mount	6 V 10 V	-55 °C	175 ░C	1760 pF	80 V	20 V	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 80 V 7.7A (Ta) 3.8W (Ta), 42W (Tc) Surface Mount TO-252 (DPAK)

Technical documentation and resources