FDD358 Series
Manufacturer: ON Semiconductor
MOSFET N-CH 80V 7.7A D-PAK
| Part | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Technology | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | FET Type | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Vgs (Max) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | 10 V 49 nC | DPAK (2 Leads + Tab) SC-63 TO-252-3 | MOSFET (Metal Oxide) | 3.8 W 42 W | 7.7 A | TO-252 (DPAK) | N-Channel | Surface Mount | 6 V 10 V | -55 °C | 175 ░C | 1760 pF | 80 V | 20 V | 4 V |
ON Semiconductor | 10 V 49 nC | DPAK (2 Leads + Tab) SC-63 TO-252-3 | MOSFET (Metal Oxide) | 3.8 W 42 W | 7.7 A | TO-252AA | N-Channel | Surface Mount | 6 V 10 V | -55 °C | 175 ░C | 1760 pF | 80 V | 20 V | 4 V |