Discrete Semiconductor Products

MSB709-RT1

Obsolete

ON Semiconductor

TRANS PNP 45V 0.1A SC-59

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Discrete Semiconductor Products

MSB709-RT1

Obsolete

ON Semiconductor

TRANS PNP 45V 0.1A SC-59

Deep-Dive with AI

DocumentsDatasheet Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MSB709-RT1

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	210
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	200 mW
Supplier Device Package	SC-59
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic [Max]	500 mV
Voltage - Collector Emitter Breakdown (Max)	45 V

MSB709-RT1 Series

PNP Bipolar Transistor

Part	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic [Max]	Supplier Device Package	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Operating Temperature
ON Semiconductor MSB709-RT1	100 mA	200 mW	45 V	Surface Mount	100 nA	500 mV	SC-59	PNP	210	SC-59 SOT-23-3 TO-236-3	150 °C
ON Semiconductor MSB709-RT1G	100 mA	200 mW	45 V	Surface Mount	100 nA	500 mV	SC-59	PNP	210	SC-59 SOT-23-3 TO-236-3	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MSB709-RT1 Series

The PNP Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the SC-59 package, which is designed for lower power surface mount applications.

Documents

Technical documentation and resources