MSB709-RT1 Series

PNP Bipolar Transistor

Catalog

PNP Bipolar Transistor

Part	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic [Max]	Supplier Device Package	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Operating Temperature
ON Semiconductor MSB709-RT1	100 mA	200 mW	45 V	Surface Mount	100 nA	500 mV	SC-59	PNP	210	SC-59 SOT-23-3 TO-236-3	150 °C
ON Semiconductor MSB709-RT1G	100 mA	200 mW	45 V	Surface Mount	100 nA	500 mV	SC-59	PNP	210	SC-59 SOT-23-3 TO-236-3	150 °C

Catalog

PNP Bipolar Transistor

Key Features

• High hFE, 210-460

• Low VCE(sat), < 0.5 V

• Available in 8 mm, 7-inch/3000 Unit Tape and Reel

• Pb-Free Package is Available

Description

The PNP Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the SC-59 package, which is designed for lower power surface mount applications.