Specification	FGHL40T65MQD

Current - Collector (Ic) (Max) [Max]	80 A
Gate Charge	86 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	238 W
Reverse Recovery Time (trr)	33 ns
Supplier Device Package	TO-247-3
Switching Energy	860 µJ, 520 µJ
Td (on/off) @ 25°C	109 ns
Td (on/off) @ 25°C	22 ns
Test Condition	10 Ohm, 40 A, 400 V, 15 V
Vce(on) (Max) @ Vge, Ic	1.8 V
Voltage - Collector Emitter Breakdown (Max)	650 V

FGHL40T65MQD Series

IGBT - 650 V 40 A FS4 medium switching speed IGBT

Part	Test Condition	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Supplier Device Package	Reverse Recovery Time (trr)	Package / Case	Switching Energy	IGBT Type	Power - Max [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max)	Gate Charge	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Current - Collector Pulsed (Icm)	Td (on/off) @ 25°C
ON Semiconductor FGHL40T65MQD	10 Ohm 15 V 40 A 400 V	109 ns	22 ns	TO-247-3	33 ns	TO-247-3	520 µJ 860 µJ	Trench Field Stop	238 W	Through Hole	-55 °C	175 ░C	650 V	86 nC	80 A	1.8 V
ON Semiconductor FGHL40S65UQ	6 Ohm 15 V 40 A 400 V			TO-247-3	319 ns	TO-247-3	1.76 mJ 362 µJ	Trench Field Stop		Through Hole	-55 °C	175 ░C	650 V	306 nC	80 A	1.7 V	120 A	32 ns 260 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 5.17
		10	$ 3.44
		450	$ 2.06
		900	$ 1.92
		1350	$ 1.92
Newark	Each	250	$ 2.10
		500	$ 2.04
ON Semiconductor	N/A	1	$ 1.76

Description

General part information

FGHL40T65MQD Series

ON Semiconductor's series of field stop 4th generation IGBTs offer the optimum performance by balancing vcesat and Eoff losses and well controllable turnoff Vce overshoot. Well suited for solar inverter, UPS, EV charging stations, ESS and other Hi performance power conversion applications.